300 nm SiO2 Layer+ 50nm Si3N4( both sides) on Si (100), 2" dia x 0.250 mm t, P type , B-doped R:<0.01-0.1ohm.cm

Thermal oxide Layer

• Research Grade , about 80 % useful  area
  
• SiO2(300nm)+50nm Si3N4  layer on 2" Silicon wafer( Both sides)
  
• Oxide layer thickness: 300 nm   ( 3000A)  +/-10%
• Si3N4 thickness:50nm( Both sides)
  
• Growth method - Dry oxidizing at 1000^oC
• Refractive index - 1.455
• Note:  customized oxide layer available upon request from 50 nm - 1000 nm

Silicon Wafer Specifications:

• Conductive type:        Si   P type/ Boron doped 
• Resistivity:                  0.01-0.1 ohm-cm
• Size:                          50.8 diameter +/- 0.5 mm x 0.250 +/- 0.025 mm
• Orientation:                (100) +/- 0.5^o
• Polish:                        Both  sides  polished
• Surface roughness:      < 5A

• Optional:  you may need tool below to handle the wafer ( click picture to order )

  Diamond Scriber for Cutting Single Crystal Substrate - DS-01	Micro-Fiber & Dust Free Wiper, 4"x4", 100 pcs/bag - Wiper-yx-2001	Vacuum Pen SMT-150C (NEW) - EQ-SMT-150C	Single Wafer Containers