AlN ceramic substrates are fabricated by tape casting technology. Its thermal conductivity is 4-5 times higher than. Al2O3 It is an ideal substrate for
electronic thick and thin film applications
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Aluminum Nitride Ceramic Substrates Properties |
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| Item No. | AlN-140 | AlN-170 | AlN-180 | AN5113 | AN5116 |
| Purity (wt%) | 99% | 99% | 99% | 98% | 99% |
| Density (g/cm3) | 3.24 | 3.31 | 3.31 | >3.25 | >3.26 |
| Thermal Conductivity (W/m. K) | 140+/-10 | >=170 | 180+/-10 | 100-300 | >170 |
| Thermal Expansion (x10-6/oC) | < 5.6 | 4.4 | < 5.6 | <4.3 | <4.2 |
| Dielectric Strength (Kv/mm) | >=25 | >=15 | >20 | >15 | >15 |
| Dielectric Constant (at 1MHZ) | 8.6 | 9 | 8.6 | 8.7 | 8.7 |
| Loss Tangent (x104@1 MHz) | 5 | 2 | 5 | 3-7 | 3-7 |
| Volume Resistivity (ohm-cm) | >1012 | >1014 | >5x1012 | >1014 | >1014 |
| Flexural Strength (Kgf/mm2) | 35.7 | >35.7 | > 30.6 | >25 | >30 |
| Surface Roughness (micron) in Ra | As polished: 0.05 um or 2 microinch in Ra | As polished: 0.1 um or 4 microinch in Ra | As fired: 0.3 as lapped: 0.075 as polished: 0.025 |
As fired: 0.3 as lapped: 0.075 as polished: 0.025 |
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