Important Info About GaN Crystal & Epi Template

Gallium nitride substrates are matched in lattice constant and thermal expansion properties for epitaxial growth of doped GaN layers needed for fabrication of GaN-based devices. This eliminates stress and defects induced by growing GaN epi-layers on non-nitride substrates such as sapphire or silicon carbide, which increase device fabrication complexity and cost and compromise device performance. MTI currently offers GaN substrates to fill the needs of many applications.

 

  • Typical properties of GaN single crystal
  • GaN MSDS
  • U.S. Dept. of Commerce requires End User Certificate for exporting this product. For certain oversea customer , we may request you to fill the form of STATEMENT BY ULTIMATE CONSIGNEE AND PURCHASER

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    Standard Cleaning of As-grown AlN and GaN Templates


    Chemicals used: acetone and lPA

    Procedure:

    1. Tum hotplate to 150'C for both Acetone and lPA (in separate beakers)
    2. Wait for boil
    3. Place the sample in boiling Acetone for 10 minutes
    4. Remove sample from Acetone and place in heated IPA and ultrasonic for 5 minutes
    5. Dry sample completely using an N2 air gun
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