99.996% High Purity, Monocrystalline Al2O3

• Sapphire ( single crystal of Al₂O₃ ) is being used extensively as a substrate for III-V nitrides and for many other epitaxial films. 
• Orientation: C-axis[0001] ( +-0.5^o) with Standard Flat
• Orientation: C-axis[0001] +-0.5^o
• Diameter: 100mm +/- 0.1mm
• Thickness: 500um +/- 25 um
•  Major Flat: A-axis[11-20]+/-0.5^o
•  Major Flat Length: 32.5mm +/- 1.5mm
• Surface Finish: Two sides polished
• TTV: <= 25um
• Package: Each wafer is packed in 1000 class clean room .

Typical Properties:

• Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms,
• Melting Point: 2040 degree C
• Density: 3.97 gram/cm² 
• Growth Technique: CZ
• Crystal Purity: 99.996%
• Hardness: 9 ( mohs )
• Thermal Expansion: 7.5x10^{-6 (}/ ^oC)
• Thermal Conductivity: 46.06 @ 0 ^oC 25.12 @ 100 ^oC, 12.56 @ 400 ^oC ( W/(m.K) )
• Dielectric Constant: ~ 9.4 @300K at A axis ~ 11.58@ 300K atC axis
• Loss Tangent at 10 GHz: < 2x10^-5 at A axis , <5 x10^-5 at C axis

•  Please click here for detail data
  

Related Products

Other Sapphire	GaN	AlN templates	ZnO
Diamond Scriber	Vacuum Pen	Wafer Containers	Film Coaters