InAs (111)A, P Type, Zn doped 2" dia x 0.45 mm, one side polished
InAs (111)A, P Type, Zn doped 2" dia x 0.45 mm, one side polished
Minimum Order: $20 (equipment), $100 (crystals)
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Low stock: 1 left
Regular price
$1,395.00 USD
Regular price
Sale price
$1,395.00 USD
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SKU: : \IAZncA50D045C1US5
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2" InAs wafer (P type)
- 2" InAs wafer
- P Type, Zn doped
- Size: 2" dia x 450 micron +/-20 microns
- Orientation: <111>A
- Polishing: one-side polishd
- Resistivities: 5.1x10^-2 ohm-cm
- Packing: in 1000 class clean room with wafer container
Properties
- Growth method LEC
- Orientation (111) A
- Orientation Flat SEMI
- Doping Zn doped
- Conductivity type P type
- Carrier Concentration 6.4E17/ cm3
- Mobility 192 cm2/V.S
- Resistivity 5.1x10^-2 Ohm-Cm
- EPD 1.9E4 / cm 2
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