GaAs Wafer, Growing Method: VGF, (100) Undoped Semi-Insulated, 100mm D x 0.6mm, 2SP - GAUa100D06C2US5
GaAs Wafer, Growing Method: VGF, (100) Undoped Semi-Insulated, 100mm D x 0.6mm, 2SP - GAUa100D06C2US5
Minimum Order: $20 (equipment), $100 (crystals)
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25 in stock
SKU: : \GAUa100D06C2US5
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The Gallium Arsenide (GaAs) Single Crystal Wafer is a 100 mm diameter, undoped, semi-insulating semiconductor substrate grown using the Vertical Gradient Freeze (VGF) method. It features a (100) crystal orientation, a thickness of 0.6 mm, and double-side-polished surfaces with an average roughness (Ra) of less than 0.4 nm.
This GaAs wafer offers high electrical resistivity, specified carrier mobility, and a low etch pit density (EPD). Its epitaxy-ready (EPI-ready) surface and packaging make it suitable for compound semiconductor research, epitaxial growth, thin-film deposition, and semiconductor device development.
SPECIFICATIONS
| Product Type | Gallium Arsenide (GaAs) Single Crystal Wafer |
| Material | Gallium Arsenide (GaAs) |
| Crystal Growth Method | Vertical Gradient Freeze (VGF) |
| Crystal Orientation | (100) |
| Wafer Flats | (01-1) and (011), as specified |
| Wafer Diameter | 100 mm (approximately 3.94 inches) |
| Wafer Thickness | 0.6 mm (600 µm) |
| Surface Polishing | Double-side polished (DSP) |
| Doping | Undoped |
| Electrical Type | Semi-insulating |
| Resistivity | (1.41–4.4) × 108 Ω·cm |
| Carrier Mobility | 3240–6000 cm2/(V·s) |
| Etch Pit Density (EPD) | < 5000 cm-2 |
| Average Surface Roughness (Ra) | < 0.4 nm |
| Surface & Packaging | Epitaxy-ready (EPI-ready) surface and packaging |
| Features & Applications |
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