GaN single-crystal substrates are made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH₃ to form GaN. The high growth rate enables self-supporting wafer thicknesses to be grown within a convenient time period.

Specifications of Substrate

• Orientation: c-axis (0001) ±1.0°
• Nominal Thickness: 270 ±30 µm
• Dimension: 10 × 10.5 mm ±0.5 mm
• Resistivity: < 0.5 Ω·cm
• Dislocation Density: < 6 × 10⁷ cm^-2
• Macro Defect Density: ≤ 2 cm^-2
• Transmission: ≥ 70% ( Click here to see transmission curve )
• Front Surface Finish (Ga Face): RMS < 2.0 nm
• Edge Exclusion Area: 1 mm
• Package: Single wafer container or membrane box

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