Si (100) 10x10x0.5mm, 2SP, P type B doped, R: 1-32 ohm-cm - SIBa101005

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Si (100) 10x10x0.5mm, 2SP, P type B doped, R: 1-32 ohm-cm - SIBa101005S2R1

Minimum Order: $20 (equipment), $100 (crystals)

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96 in stock

$21.85 USD

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SKU: : \SIBa101005S2R1

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This P-type silicon (Si) single-crystal substrate is boron-doped and features a (100) crystallographic orientation. It is suitable for semiconductor research, thin-film deposition, materials characterization, and laboratory applications requiring a polished silicon substrate.

The substrate measures 10 mm × 10 mm × 0.5 mm and has an electrical resistivity of 1–32 Ω·cm. Both surfaces are polished to a surface roughness of less than 5 Å RMS, providing a smooth surface for research and experimental processing.

SPECIFICATIONS

Product Type	P-type silicon single-crystal substrate.
Material	Single-crystal silicon (Si).
Conductivity Type	P-type.
Dopant	Boron (B).
Electrical Resistivity	1–32 Ω·cm. For accurate resistivity measurements, a four-point probe testing instrument is recommended. View Portable Four-Point Probe Resistivity Testing Instrument.
Substrate Dimensions	10 mm × 10 mm × 0.5 mm.
Crystal Orientation	(100).
Surface Polishing	Double-side polished (DSP).
Surface Roughness	< 5 Å RMS (less than 0.5 nm RMS).
Applications	Semiconductor materials research Thin-film deposition and characterization Silicon substrate processing experiments Electrical resistivity measurements Academic and industrial laboratory research
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