GaAs Wafer, Growing Method: VGF, (100) undoped Semi-Insulated 2"D x 0.5 mm, 1SP - GAUa50D05C1US5
GaAs Wafer, Growing Method: VGF, (100) undoped Semi-Insulated 2"D x 0.5 mm, 1SP - GAUa50D05C1US5
Minimum Order: $20 (equipment), $100 (crystals)
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50 in stock
SKU: : \GAUa50D05C1US5
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The Gallium Arsenide (GaAs) Single Crystal Wafer is a 2-inch-diameter, undoped, semi-insulating semiconductor substrate grown using the Vertical Gradient Freeze (VGF) method. It features a (100) crystal orientation with a tolerance of ±0.5°, a thickness of 0.5 mm, and a single-side-polished surface.
This GaAs wafer offers high electrical resistivity, specified carrier mobility, and an epitaxy-ready (EPI-ready) surface with an average roughness (Ra) of less than 0.4 nm. It is suitable for compound semiconductor research, epitaxial growth, thin-film deposition, and semiconductor device development.
SPECIFICATIONS
| Product Type | Gallium Arsenide (GaAs) Single Crystal Wafer |
| Material | Gallium Arsenide (GaAs) |
| Crystal Growth Method | Vertical Gradient Freeze (VGF) |
| Crystal Orientation | (100) ±0.5° |
| Wafer Diameter | 2 inches (approximately 50.8 mm) |
| Wafer Thickness | 0.5 mm (500 µm) |
| Surface Polishing | Single-side polished (SSP) |
| Doping | Undoped |
| Electrical Type | Semi-insulating |
| Resistivity | (0.96–5.34) × 108 Ω·cm |
| Carrier Mobility | 4470–6540 cm2/(V·s) |
| Etch Pit Density (EPD) | < 5000 (source unit listed as cm2; confirm whether cm-2 was intended) |
| Average Surface Roughness (Ra) | < 0.4 nm |
| Surface & Packaging | Epitaxy-ready (EPI-ready) surface and packaging |
| Features & Applications |
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