Important Info About SiC Film (3C) on Si Wafer

The only pure cubic polytype, 3C-SiC, has many advantages for MOS device applications over the other polytypes due to the smaller band gap. In addition, the electron Hall mobility is isotropic and higher compared with these of 4H and 6H polytypes [1]. Most important is that this polytype can be grown on silicon substrates hence there is significant.

3C-SiC Main Properties:

Crystal structure: Zinc blende (cubic), see picture on right Lattice constant: a=4.3596 A  Dielectric constant (high frequency): 6.52 @300 Density: 3.166 g cm-3293 K

Resources:

• 3C-SiC TEM and AFM Data
• 3C-SiC Physical Properties, Comparison between 3C,4H&6H SiC 

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