Thermal oxide or silicon dioxide layer is formed on bare silicon surface at temperature range from 900°C~1200°C. Compared to CVD deposited oxide layer, thermal oxide has a higher uniformity, and higher dielectric strength. In most silicon-based devices, thermal oxide layer play an important role to pacify the silicon surface , to act as doping barriers and as surface dielectrics. MTI provides quality and standard thermal oxide wafer in diameter from 2” to 6” at the following links. If you need special layer thickness please contact us at info@mtixtl.com
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