GaN Template on Sapphire(0001) 2"x 0.5mm,1sp ,GaN Film: 20um ,Semi-insulated--Research Grade
GaN Template on Sapphire(0001) 2"x 0.5mm,1sp ,GaN Film: 20um ,Semi-insulated--Research Grade
Low stock: 8 left
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$1,295.00 USD
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$1,295.00 USD
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SKU: : \FmGaNonALC50D05C1FT20umSemiUS
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GaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate.
Specifications
Research Grade
- Sizes 2” Round
- Dimensions 50mm +/- 2mm
- Substrate Sapphire, Orientation c-axis (0001) +/- 1.0 o
- Conduction Type: n-type,
- Resistivity > 1E6 Ohm-cm
- Front Surface Finish (Ga Face) As-grown
- Back Surface Finish Sapphire as-received finish
- Useable Surface Area >90%
- Edge Exclusion Area 1mm
- Package Single Wafer Container
- GaN layer thickness 20 microns , (+/- 10%)
Macro Defect Density: <=10 cm^-2
Lattice Constant Mismatch: 14% mismatch
Dislocation Density: 5x10^9/ cm^2
Related data
- Please click here to see XRD Rocking curve of GaN template
- Please click here to see Dislocation vs Thickness of GaN template
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