GaP wafer, S doped, (100), 5 x5 x0.5mm, 1sp - GPSa050505S1
GaP wafer, S doped, (100), 5 x5 x0.5mm, 1sp - GPSa050505S1
Minimum Order: $20 (equipment), $100 (crystals)
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Low stock: 3 left
Regular price
$105.00 USD
Regular price
Sale price
$105.00 USD
Unit price
per
SKU: : \GPSa050505S1
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- GaP single crystal wafer
- Size:5mmx5mmx0.5mm
- Doping: S-doped,
- Conducting type: N-type
- Orientation: (100)+_30'
- Polished: One side polished.
- Surface finish (RMS or Ra) : < 8A
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Typical Physical Properties |
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Crystal Structure |
Cubic. a =5.4505 ?/FONT> |
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Growth Method |
CZ (LEC) |
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Density |
4.13 g/cm3 |
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Melt Point |
1480 oC |
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Thermal Expansion |
5.3 x10-6 / oC |
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Dopant |
S doped |
undoped |
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Crystal growth axis |
<111> or <100> |
<100> or <111> |
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Conducting Type |
N |
N |
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Carrier Concentration |
(2 ~ 12) x1017 /cm3 |
4 ~ 6 x1016 /cm3 |
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Resistivity |
~ 0.03ohm-cm |
~ 0.3 ohm-cm |
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EPD |
< 3x105 |
< 3x105 |
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