2" InAs wafer (Ntype)

• 2" InAs wafer     (Undoped, N type)
• Size:                     2" dia x 500 micron +/-25 microns
• Orientation:          <100> +/-0.5⁰
•  Polishing:             one-side polishd
• Packing:                 in 1000 class clean room with wafer container

Properties

• Growth method                                                 LEC
• Orientation                                                         (100)  +/- 0.5 ^o                                                     
• Doping                                                                undoped
• Conductivity type                                               N type
• Carrier Concentration                                     (1-3.0) x10^16/ cm³
• Mobility                                                            ~20000 cm ²/Vs
• Resistivity                                                   >=1.0x10^-4 ohm.cm
• EPD                                                            <10000  / cm ² 

 
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