InAs (100), Undoped 2" dia x 0.5mm, one side polished - IAUa50D05C1US
InAs (100), Undoped 2" dia x 0.5mm, one side polished - IAUa50D05C1US
Minimum Order: $20 (equipment), $100 (crystals)
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19 in stock
Regular price
$1,150.00 USD
Regular price
Sale price
$1,150.00 USD
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SKU: : \IAUa50D05C1US
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2" InAs Wafer (N-type)
- Wafer: 2" InAs
- Doping: Undoped
- Conductivity Type: N-type
- Size: 2" diameter × 500 µm ±25 µm
- Orientation: <100> ±0.5°
- Polishing: One side polished
- Packing: Wafer container in a Class 1000 clean room
Properties
- Growth Method: LEC
- Orientation: (100) ±0.5°
- Doping: Undoped
- Conductivity Type: N-type
- Carrier Concentration: (1–3.0) × 1016/cm3
- Mobility: ~20,000 cm2/(V·s)
- Resistivity: ≥ 1.0 × 10-4 Ω·cm
- EPD: < 10,000/cm2
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