InAs (100), undoped 30mm dia wafer 1sp - IAUa30D05C1US – MTI Online Store

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InAs (100), undoped 30mm dia wafer 1sp - IAUa30D05C1US

InAs (100), undoped 30mm dia wafer 1sp - IAUa30D05C1US

Low stock: 2 left

$599.00 USD

$599.00 USD

Sale Email for Lead Time

SKU: : \IAUa30D05C1US

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Growth method LEC
Orientation (100) ± 0.5 Deg
Doping Undoped
Conductivity type N type
Carrier Concentration <3E16 / cm³
Mobility >20000 cm²/V.S
EPD <5E4 / cm ²
Standard thickness 500 ± 20 mm
Standard diameter 30 mm
Polish one-side

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