InSb   substrate     (N type, undoped) 2sp

•  Size:                      10 x 10 x 0.5 mm
• Orientation            <100> +/-0.5^o 
•  Polishing:             both-sides epi-polished 
• Packing:                Sealed under nitrogen with single wafer comtainer  in 1000 class clean room

Properties

• Growth method                                                 LEC
• Orientation                                                         (100)  +/- 0.5^o                                     
• Doping                                                                Undoped
• Conductivity type                                               N type
• Carrier Concentration                                       (2-7)E14 @77K
• Mobility                                                               4E4 cm²/Vs
• EPD                                                                    <300 / cm ²

Optional:  
you may need tool below to handle the wafer ( click picture to order )

Diamond Scriber for Cutting Single Crystal Substrate - DS-01	Micro-Fiber & Dust Free Wiper, 4"x4", 100 pcs/bag - Wiper-yx-2001	Vacuum Pen SMT-150C (NEW) - EQ-SMT-150C	Single Wafer Containers

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