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Si wafer (111), 6 " dia x 0.65 - 0.7 mm, 1SP P type ( B doped) with resistivities: 5-10 ohm-cm,25pcs/Pack

Si wafer (111), 6 " dia x 0.65 - 0.7 mm, 1SP P type ( B doped) with resistivities: 5-10 ohm-cm,25pcs/Pack

Regular price $1,125.00 USD

Regular price Sale price $1,125.00 USD
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Si wafer (111), 6 " dia x 0.65 - 0.7 mm, 1SP P type ( B doped) with resistivities: 1-10 ohm-cm

Si wafer (111), 6 " dia x 0.65 - 0.7 mm, 1SP P type ( B doped) with resistivities: 1-10 ohm-cm

Regular price $69.00 USD

Regular price Sale price $69.00 USD
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Si wafer (100), 6 " dia x 0.65 - 0.7 mm, 1SP P type (B doped) with resistivities: 1-30ohm-cm - SIBa152D0675C1R1US

Si wafer (100), 6 " dia x 0.65 - 0.7 mm, 1SP P type (B doped) with resistivities: 1-30ohm-cm - SIBa152D0675C1R1US

Regular price $89.95 USD

Regular price Sale price $89.95 USD
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Si Wafer (100), 5 " dia x 0.625mm, 1SP N-type ,P- doped, R:1-10 ohm-cm,

Si Wafer (100), 5 " dia x 0.625mm, 1SP N-type ,P- doped, R:1-10 ohm-cm,

Regular price $69.95 USD

Regular price Sale price $69.95 USD
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Si Wafer (111), 5 " dia x 0.625mm, 1SP P-type ( B- doped), R:1-10 ohm-cm - SIBc125D0625C1R1US

Si Wafer (111), 5 " dia x 0.625mm, 1SP P-type ( B- doped), R:1-10 ohm-cm - SIBc125D0625C1R1US

Regular price $69.95 USD

Regular price Sale price $69.95 USD
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Si Wafer (100), 4 " dia x 0.275 mm, P Type B doped, 1SP, Resistivities: 0.5 - 2.0 ohm-cm

Si Wafer (100), 4 " dia x 0.275 mm, P Type B doped, 1SP, Resistivities: 0.5 - 2.0 ohm-cm

Regular price $79.00 USD

Regular price Sale price $79.00 USD
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Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, Resistivities: 0.1 - 1.0 ohm-cm

Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, Resistivities: 0.1 - 1.0 ohm-cm

Regular price $39.95 USD

Regular price Sale price $39.95 USD
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Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, resistivities: 0.001-0.005 ohm-cm

Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, resistivities: 0.001-0.005 ohm-cm

Regular price $39.95 USD

Regular price Sale price $39.95 USD
Unit price per
Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, resistivities: 1-10 ohm-cm

Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, resistivities: 1-10 ohm-cm

Regular price $39.95 USD

Regular price Sale price $39.95 USD
Unit price per
Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, resistivities:0.01-0.1ohm-cm

Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, resistivities:0.01-0.1ohm-cm

Regular price $39.95 USD

Regular price Sale price $39.95 USD
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Si Wafer (111) 4 +/- 0.5 degree off , 4 " dia x 0.5 mm, 1SP, P Type, B doped, resistivity: 0.004-0.006 ohm-cm

Si Wafer (111) 4 +/- 0.5 degree off , 4 " dia x 0.5 mm, 1SP, P Type, B doped, resistivity: 0.004-0.006 ohm-cm

Regular price $49.95 USD

Regular price Sale price $49.95 USD
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Si Wafer (111) with 4 degree off , 4 " dia x 0.5 mm, 1SP, P Type, B doped, resistivity: <0.01 ohm-cm

Si Wafer (111) with 4 degree off , 4 " dia x 0.5 mm, 1SP, P Type, B doped, resistivity: <0.01 ohm-cm

Regular price $49.95 USD

Regular price Sale price $49.95 USD
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Si Wafer (111)4 +/- 0.5 degree off , 4 " dia x 0.525 mm, 1SP, P Type, B doped, resistivity: 0.001 -0.005 ohm-cm

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Si Wafer (111)4 +/- 0.5 degree off , 4 " dia x 0.525 mm, 1SP, P Type, B doped, resistivity: 0.001 -0.005 ohm-cm

Regular price $39.95 USD

Regular price Sale price $39.95 USD
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Si Wafer (111) miscut 0+/-0.5 degree, 4 " dia x 0.525 mm, 1SP, P Type, B doped, Resistivities:1-10 ohm-cm

Si Wafer (111) miscut 0+/-0.5 degree, 4 " dia x 0.525 mm, 1SP, P Type, B doped, Resistivities:1-10 ohm-cm

Regular price $39.95 USD

Regular price Sale price $39.95 USD
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Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, Resistivities>200 ohm-cm

Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, Resistivities>200 ohm-cm

Regular price $59.95 USD

Regular price Sale price $59.95 USD
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Si Wafer (100) 4"dia x 0.525 mm 1SP, N Type P doped Resistivities: 0.1-1 ohm-cm

Si Wafer (100) 4"dia x 0.525 mm 1SP, N Type P doped Resistivities: 0.1-1 ohm-cm

Regular price $39.95 USD

Regular price Sale price $39.95 USD
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Si wafer (111), 6 " dia x 0.65 - 0.7 mm, 1SP P type ( B doped) with resistivities: 5-10 ohm-cm,25pcs/Pack

Si wafer (111), 6 " dia x 0.65 - 0.7 mm, 1SP P type ( B doped) with resistivities: 5-10 ohm-cm,25pcs/Pack

Si wafer (111), 6 " dia x 0.65 - 0.7 mm, 1SP P type ( B doped) with resistivities: 1-10 ohm-cm

Si wafer (111), 6 " dia x 0.65 - 0.7 mm, 1SP P type ( B doped) with resistivities: 1-10 ohm-cm

Si wafer (100), 6 " dia x 0.65 - 0.7 mm, 1SP P type (B doped) with resistivities: 1-30ohm-cm - SIBa152D0675C1R1US

Si wafer (100), 6 " dia x 0.65 - 0.7 mm, 1SP P type (B doped) with resistivities: 1-30ohm-cm - SIBa152D0675C1R1US

Si Wafer (100), 5 " dia x 0.625mm, 1SP N-type ,P- doped, R:1-10 ohm-cm,

Si Wafer (100), 5 " dia x 0.625mm, 1SP N-type ,P- doped, R:1-10 ohm-cm,

Si Wafer (111), 5 " dia x 0.625mm, 1SP P-type ( B- doped), R:1-10 ohm-cm - SIBc125D0625C1R1US

Si Wafer (111), 5 " dia x 0.625mm, 1SP P-type ( B- doped), R:1-10 ohm-cm - SIBc125D0625C1R1US

Si Wafer (100), 4 " dia x 0.275 mm, P Type B doped, 1SP, Resistivities: 0.5 - 2.0 ohm-cm

Si Wafer (100), 4 " dia x 0.275 mm, P Type B doped, 1SP, Resistivities: 0.5 - 2.0 ohm-cm

Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, Resistivities: 0.1 - 1.0 ohm-cm

Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, Resistivities: 0.1 - 1.0 ohm-cm

Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, resistivities: 0.001-0.005 ohm-cm

Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, resistivities: 0.001-0.005 ohm-cm

Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, resistivities: 1-10 ohm-cm

Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, resistivities: 1-10 ohm-cm

Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, resistivities:0.01-0.1ohm-cm

Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, resistivities:0.01-0.1ohm-cm

Si Wafer (111) 4 +/- 0.5 degree off , 4 " dia x 0.5 mm, 1SP, P Type, B doped, resistivity: 0.004-0.006 ohm-cm

Si Wafer (111) 4 +/- 0.5 degree off , 4 " dia x 0.5 mm, 1SP, P Type, B doped, resistivity: 0.004-0.006 ohm-cm

Si Wafer (111) with 4 degree off , 4 " dia x 0.5 mm, 1SP, P Type, B doped, resistivity: <0.01 ohm-cm

Si Wafer (111) with 4 degree off , 4 " dia x 0.5 mm, 1SP, P Type, B doped, resistivity: <0.01 ohm-cm

Si Wafer (111)4 +/- 0.5 degree off , 4 " dia x 0.525 mm, 1SP, P Type, B doped, resistivity: 0.001 -0.005 ohm-cm

Si Wafer (111)4 +/- 0.5 degree off , 4 " dia x 0.525 mm, 1SP, P Type, B doped, resistivity: 0.001 -0.005 ohm-cm

Si Wafer (111) miscut 0+/-0.5 degree, 4 " dia x 0.525 mm, 1SP, P Type, B doped, Resistivities:1-10 ohm-cm

Si Wafer (111) miscut 0+/-0.5 degree, 4 " dia x 0.525 mm, 1SP, P Type, B doped, Resistivities:1-10 ohm-cm

Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, Resistivities>200 ohm-cm

Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, Resistivities>200 ohm-cm

Si Wafer (100) 4"dia x 0.525 mm 1SP, N Type P doped Resistivities: 0.1-1 ohm-cm

Si Wafer (100) 4"dia x 0.525 mm 1SP, N Type P doped Resistivities: 0.1-1 ohm-cm

Si

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