Name: 100nm YBCO Film on Nb: SrTiO3 (100) 10x10x0.5mm, 1sp wt 0.7%
Brand: MTI
SKU: FmYBCOonSTONba101005S1FT100nm
Price: 429.0 USD
Availability: InStock

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100nm YBCO Film on Nb: SrTiO3 (100) 10x10x0.5mm, 1sp wt 0.7%

Low stock: 5 left

$429.00 USD

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SKU: : \FmYBCOonSTONba101005S1FT100nm

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Epitaxial YBCO HTS Thin Film on SrTiO3 substrate up to 30 mm

MTI Corp joins with several research institutes around the world, to finally make high Tc superconducting epitaxial thin film commercially available at an affordable price. MTI supplies high quality double side epitaxial thin film up to 3" diameter on LaAlO3, LSAT, Al2O3 and SrTiO3 single crystal substrate by a unique technology.

This will make YBCO thin film available at low cost. Researchers don't need to grow thin film any more, but concentrate their talent on HTSC film related devices, such as microwave filter for wireless and HTSC Squid.

Main Specifications of HTS Film

Epitaxial thin Film Composition	<100> YBCO YBa2Cu3Ox ( X= 6.8 -6.9 )
Film dimension both for one side or double side film	YBCO / LaAlO3 10x10 mm ~ 3" dia. YBCO / LSAT 10x10 mm ~ 2" dia. YBCO / Al2O3 10x10 mm ~3" dia YBCO / STO 10x10 mm ~ 1" dia.
Epitaxial FWHM	< 0.2 ^o
Critical Transition Temperature Tc	> 90 K
Transition Temp. range ΔTc	< 0.5 K
Critical Current Jc	2~3 MA/cm2 @ 77K 0T
Surface Resistivity Rs	< 1 m Ohm @ 10 GHz, 77K, 0T
Thin film thickness	200 - 500 nm upon request ,
Uniformity for 2" wafer	Thickness 400 nm +/- 10 % Tc 90K +/- 1 ^o Jc 3 +/-0.5 MA/cm² @ 80% wafer center.
Package	Sealed in Vacuum in a plastic box and bag.

Double side YBCO film on LAO. 224s Jc Uniformity measured FZK

Note: YBCO is very sensitive to moisture, and must be stored in desiccator box.


Thin Films A-Z	Crystal wafer A-Z	Plasma Cleaner	Wafer Containers	Dicing saw	Film Coater

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100nm YBCO Film on Nb: SrTiO3 (100) 10x10x0.5mm, 1sp wt 0.7%

100nm YBCO Film on Nb: SrTiO3 (100) 10x10x0.5mm, 1sp wt 0.7%

Epitaxial YBCO HTS Thin Film on SrTiO3 substrate up to 30 mm

This will make YBCO thin film available at low cost. Researchers don't need to grow thin film any more, but concentrate their talent on HTSC film related devices, such as microwave filter for wireless and HTSC Squid.

Main Specifications of HTS Film

Epitaxial thin Film Composition

<100> YBCO
YBa2Cu3Ox ( X= 6.8 -6.9 )

Film dimension

both for one side or double side film

YBCO / LaAlO3 10x10 mm ~ 3" dia.

YBCO / LSAT 10x10 mm ~ 2" dia.

YBCO / Al2O3 10x10 mm ~3" dia

YBCO / STO 10x10 mm ~ 1" dia.

Epitaxial FWHM

< 0.2 ^o

Critical Transition Temperature Tc

> 90 K

Transition Temp. range ΔTc

< 0.5 K

Critical Current Jc

2~3 MA/cm2 @ 77K 0T

Surface Resistivity Rs

< 1 m Ohm @ 10 GHz, 77K, 0T

Thin film thickness

200 - 500 nm upon request ,

Uniformity for 2" wafer

Thickness 400 nm +/- 10 %

Tc 90K +/- 1 ^o

Jc 3 +/-0.5 MA/cm² @ 80% wafer center.

Package

Sealed in Vacuum in a plastic box and bag.

100nm YBCO Film on Nb: SrTiO3 (100) 10x10x0.5mm, 1sp wt 0.7%

100nm YBCO Film on Nb: SrTiO3 (100) 10x10x0.5mm, 1sp wt 0.7%

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Item Added to Quote!

Epitaxial YBCO HTS Thin Film on SrTiO3 substrate up to 30 mm

This will make YBCO thin film available at low cost. Researchers don't need to grow thin film any more, but concentrate their talent on HTSC film related devices, such as microwave filter for wireless and HTSC Squid.

Main Specifications of HTS Film

Epitaxial thin Film Composition

<100> YBCOYBa2Cu3Ox ( X= 6.8 -6.9 )

Film dimension

both for one side or double side film

YBCO / LaAlO3 10x10 mm ~ 3" dia.

YBCO / LSAT 10x10 mm ~ 2" dia.

YBCO / Al2O3 10x10 mm ~3" dia

YBCO / STO 10x10 mm ~ 1" dia.

Epitaxial FWHM

< 0.2 o

Critical Transition Temperature Tc

> 90 K

Transition Temp. range ΔTc

< 0.5 K

Critical Current Jc

2~3 MA/cm2 @ 77K 0T

Surface Resistivity Rs

< 1 m Ohm @ 10 GHz, 77K, 0T

Thin film thickness

200 - 500 nm upon request ,

Uniformity for 2" wafer

Thickness 400 nm +/- 10 %

Tc 90K +/- 1 o

Jc 3 +/-0.5 MA/cm2 @ 80% wafer center.

Package

Sealed in Vacuum in a plastic box and bag.

<100> YBCO
YBa2Cu3Ox ( X= 6.8 -6.9 )

< 0.2 ^o

Tc 90K +/- 1 ^o

Jc 3 +/-0.5 MA/cm² @ 80% wafer center.