4H-SiC Epitaxial Film on 4H-SiC (0001) w/ 8 degree off, P type, 2"dia. x0.33mm, carrier conc. 1.4 E17/cc, 2sp, thickness 4.3um - Fm4HSCon4HSC50d03C2deg8US
4H-SiC Epitaxial Film on 4H-SiC (0001) w/ 8 degree off, P type, 2"dia. x0.33mm, carrier conc. 1.4 E17/cc, 2sp, thickness 4.3um - Fm4HSCon4HSC50d03C2deg8US
Minimum Order: $20 (equipment), $100 (crystals)
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Low stock: 1 left
Regular price
$2,999.00 USD
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$2,999.00 USD
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SKU: : \Fm4HSCon4HSC50d03C2deg8US
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Specifications
Film:
- 4H-SiC (0001)
- Film target thickness: 4.3 microns with (thickness acceptation range) +/- 10%
- Film target doping layer: 1.4E17/cc with (doping acceptation range) +0% /- 30%
- Conductive Type P type with
- Surface finish Both sides will be polished after deposition, Both Front and Backside Epiwafer polishing with Ra or RMS < 5 Angstrom
Substrate:
- 4H-SiC (0001) Prime grade
- Off axis: miscut 8.0 +/- 0.5 degree
- Prime Grade: with FWHM20 arc second
- OF orientation: parallel {10-10} +/- 5 degree
- OF length: 15.9 +/- 1.7 mm
- IF orientation: 90 degree cw. from OF +/- 5 degree
- IF length: 8.0 +/- 1.7 mm
- Diameter: 50.8 +/- 0.38 mm
- Thickness: 330 +/- 25 um
- Resistivity: < 0.03 ohm-cm
- Edge exclusion: 1mm
- Two sides polished with Si-face CMP with average roughness: Ra < 0.2 RMS
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