• 4H-SiC Epitaxial Film on 4H-SiC (0001) w/ 8 degree off, P type,2"dia.x0.33mm, carrier conc. 1.4 E17/cc, 2sp, thickness 4.3um-Fm4HSCon4HSC50d03C2deg8US
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4H-SiC Epitaxial Film on 4H-SiC (0001) w/ 8 degree off, P type,2"dia.x0.33mm, carrier conc. 1.4 E17/cc, 2sp, thickness 4.3um-Fm4HSCon4HSC50d03C2deg8US

4H-SiC Epitaxial Film on 4H-SiC (0001) w/ 8 degree off, P type,2"dia.x0.33mm, carrier conc. 1.4 E17/cc, 2sp, thickness 4.3um-Fm4HSCon4HSC50d03C2deg8US

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$2,999.00 USD
$2,999.00 USD
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SKU: Fm4HSCon4HSC50d03C2deg8US
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Specifications 

Film:
  • 4H-SiC (0001)
  • Film target thickness:       4.3 microns  with  (thickness acceptation range) +/- 10%
  • Film target doping layer:    1.4E17/cc  with  (doping acceptation range)       +0% /- 30%
  • Conductive Type            P type with 
  • Surface finish                Both sides will be polished after deposition,  Both Front and Backside Epiwafer polishing with Ra or RMS < 5 Angstrom
Substrate:
  • 4H-SiC (0001) Prime grade
  • Off axis: miscut  8.0 +/- 0.5 degree
  • Prime Grade: with FWHM 20 arc second
  • OF orientation: parallel {10-10} +/- 5 degree
  • OF length: 15.9 +/- 1.7 mm
  • IF orientation: 90 degree cw. from OF +/- 5 degree
  • IF length:     8.0 +/- 1.7 mm
  • Diameter:    50.8 +/- 0.38 mm
  • Thickness:   330 +/- 25 um
  • Resistivity:   < 0.03 ohm-cm
  • Edge exclusion: 1mm
  • Two sides polished with Si-face CMP with average roughness: Ra < 0.2 RMS

 

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