• 8.5" RF Plasma Cleaner / Etcher with Vacuum Pump. (12 Liter, 13.56 Mhz, 80W max.) - EQ-PCE-8
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8.5" RF Plasma Cleaner / Etcher with Vacuum Pump. (12 Liter, 13.56 Mhz, 80W max.) - EQ-PCE-8

8.5" RF Plasma Cleaner / Etcher with Vacuum Pump. (12 Liter, 13.56 Mhz, 80W max.) - EQ-PCE-8

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SKU: PCE8

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PCE-8 is a plasma cleaner or etching unit with 8.5 "Dia x 14“"Length quartz chamber and 0 - 80W variable RF power. It is designed to clean and remove nano-scale organic contamination on the substrate or wafer up to 8" using air, oxygen, or argon plasma.  The rate of organic removal is about 20 nm/min Maximum at high RF power. It is an excellent tool to pre-clean single crystal substrate before epitaxial film deposition to achieve better quality.  If you do not have experience for plasma surface cleaning, please refer to the articles as follows. It also can be used as a plasma etcher at higher RF power.
  • McIntire, Theresa M., S. Rachelle Smalley, John T. Newberg, A. Scott Lea, John C. Hemminger, Barbara J. Finlayson-Pitts. "Substrate Changes Associated with the Chemistry of Self-Assembled Monolayers on Silicon." Langmuir (2006) 22(13): 5617-5624.
  • Sumner, Ann Louise, Erik J. Menke, Yael Dubowski, John T. Newberg,  etc. "The Nature of Water on Surfaces of Laboratory Systems and Implications for Heterogeneous Chemistry in the Troposphere." Phys. Chem. Chem. Phys. (2004) 6: 604-613.
  • Mennicke, Ulrike, Tim Salditt. "Preparation of Solid-Supported Lipid Bilayers by Spin-Coating." Langmuir (2002) 18: 8172-8177.
SPECIFICATIONS
Input Power
  • AC 220V, 50/60 Hz, 
  • RF Power:    80 W Max.    ( standard for cleaning)   
  • Vacuum Pump:   normal 550W, start 750W
  • Total Power:    830W max. 
  • Working current  <= 3A
RF Power
  • RF power is adjustable within 0 - 80W
  • RF frequency:   13,56 MH

Plasma Chamber
  • 8.5" O.D x 8.2" I.D x 14" L  high purity quartz chamber
  • Volume: 12 L
  • Hinged-type front flange made of aluminum
  • 2.3" Dia. ( 60mm) quartz window for easy observation
  • Totally RF radiation shield with zero RF leaking
Control Panel
  • 6" color touch screen to control all parameters automatically for plasma cleaning, such as vacuum level, gas flow rate, RF power level, and cleaning time.
  • Built in one channel Mass flow meter ( 0 - 500ml/minute) to control gas flow within +/- 0.5 ml/m
Vacuum Pump and Valve
Inert Gas
  • Many inert gases can be chosen for plasma cleaning such as N2, Ar, Air, and mixed gas depending on what kind of material will be treated. ( not included in the package)
  • No flammable gas shall be used for the plasma cleaner
Optional   
Overall Dimensions
  • 620 L ×600 W ×600 H, mm
  • 24" x 23.5" x 23.5"  ( inch )
Shipping Weight & Dimension
  • 350 lbs with a vacuum pump
  • 48"x40"x37"
Warranty One year limited warranty with lifetime support ( no warranty for Pyrex glass chamber )



Operation Manual

    
Application Note
  • Please test the best plasma power based on your application by yourselves
    • For plasma cleaning,  usually keep RF power between 10 - 30W depending on the sample material to be cleaner.
    • For Plasma etching,   usually keep RF power between 35 - 80 W depending on the sample material to be cleaner.
  • High power RF power supply for etching is available upon request up to 300W at extra cost.
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