• Sapphire ( single crystal of Al₂O₃ ) is being used extensively as a substrate for III-V nitrides and for many other epitaxial films 
• Orientation: C-axis[0001]  off  M-plane(1-100) 0.2^o+/-0.1^o
  
• Diameter: 50.8mm +/- 0.1mm
• Thickness: 430um +/- 15 um
• Major Flat: A-axis[11-20]+/-0.2^o
• Major Flat Length: 16mm +/- 1.0mm
• Surface Finish: Front side: Epi- polished , Ra< 0.3 nm(by AFM); Back side: Fine ground, Ra= 0.4-1.2 um
  
• TTV: <= 7um
• Bow:<= 10 um
• WARP<= 15um
• TIR<= 10um
• Polished surface: One side epi polished by special CMP technology
• Package: Each wafer is packed in 1000 class clean room 

Typical Properties:

• Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
• Melting Point: 2040 degree C
• Density: 3.97 gram/cm² 
• Growth Technique: CZ
• Crystal Purity:  >99.99%
• Hardness: 9 ( mohs)
• Thermal Expansion: 7.5x10^{-6 (}/ ^oC)
• Thermal Conductivity: 46.06 @ 0 ^oC, 25.12 @ 100 ^oC, 12.56 @ 400 ^oC ( W/(m.K) ) 
• Dielectric Constant: ~ 9.4 @300K  at A axis ~ 11.58@ 300K at C axis
• Loss Tangent at 10 GHz: < 2x10^-5  at A axis,  <5 x10^-5  at C axis

 Please click here for detail data

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