Features:

• A plane  (11-20) sapphire wafer  is being used extensively as a substrate for III-V nitrides and magnetic epitaxial films due to its better lattice mismatch
• Wafer size: 1" dia x 0.4 - 0.5 mm thickness 
• Orientaion: A plane  <11-20> orn.+/-0.5 Deg  
• Polished surface: Wafer surface is EPI polished via a special CMP procedure  
• Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container

Typical Properties:

• Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
• Melting Point: 2040 degree C
• Density: 3.97 gram/cm² 
• Growth Technique: CZ
• crystal purity: >99.99%
• Hardness: 9 ( mohs)
• Thermal Expansion: 7.5x10^{-6 (}/ ^oC)
• Thermal Conductivity: 46.06 @ 0 ^oC   25.12 @ 100 ^oC,  12.56 @ 400 ^oC   ( W/(m.K) )
• Dielectric Constant: ~ 9.4 @300K  at A axis ~ 11.58@ 300K at C axis
• Loss Tangent at 10 GHz: < 2x10^-5  at A axis,  <5 x10^-5  at C axis

 Please click here for detail data

Please Click link below to find other substrates for III-V Nitride

ZnO	SiC	GaN	MgAl2O4 (spinel)	LiGaO2
Other Al2O3	AlN template	Wafer Carriers	Plasma Cleaners	Film Coater