Features:

• Sapphire substrate is the popular substrates for III-V nitrides, superconductor and magnetic epi film due to less mis-matched lattice and stable chemical and physical properties.
• Wafer size: 10 mm x 5 mm x 0.5 mm thick
• Orientation tolerance: +/-0.5 Deg. R plane orientation
• Polished surface: substrate surface is EPI polished via a special CMP procedure with Ra < 5 A
• 1 side polished 
• Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container.
• Precaution: R plane sapphire wafer is easy to cleave compared with C plane's. Please handle it with a care

Typical Properties:

• Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
• Melting Point: 2040 degree C
• Density: 3.97 gram/cm² 
• Growth Technique: CZ
• Crystal Purity: >99.99%
• Hardness: 9 ( mohs )
• Thermal Expansion: 7.5x10^{-6 (}/ ^oC)
• Thermal Conductivity: 46.06 @ 0 ^oC, 25.12 @ 100 ^oC, 12.56 @ 400 ^oC ( W/(m.K) )
• Dielectric Constant: ~ 9.4 @300K at A axis ~ 11.58@ 300K atC axis
• Loss Tangent at 10 GHz: < 2x10^-5 at A axis, <5 x10^-5 at C axis

Please click here for detail data

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