Specifications:

• Orientation:  M <10-10> +/-0.5 ^o
• Wafer size:   2" dia x 0.4 - 0.5 mm thickness
• Polished surface:   One sideEPI polished via a special CMP procedure.  Ra <5A
•  Package:    Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container.

Typical Properties:

•  Crystal Structure:      Hexagonal. a=4.758 Angstroms c=12.99 Angstroms,
• Melting Point: 2040 degree C
• Density: 3.97 gram/cm² 
• Growth Technique: CZ
• crystal purity:             >99.99%
• Hardness:                   9 ( mohs)
• Thermal Expansion:    7.5x10^{-6 (}/ ^oC)
• Thermal Conductivity: 46.06 @ 0 ^oC     25.12 @ 100 ^oC,     12.56 @ 400 ^oC   ( W/(m.K) )
   
• Dielectric Constant: ~ 9.4 @300K  at A axis ~ 11.58@ 300K at C axis
• Loss Tangent at 10 GHz: < 2x10^-5  at A axis ,  <5 x10^-5  at C axis

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