Al2O3- Sapphire Wafer, R Plane, 100mm dia x 0.46mm, 1SP - ALR100D046C1US
Al2O3- Sapphire Wafer, R Plane, 100mm dia x 0.46mm, 1SP - ALR100D046C1US
56 in stock
Regular price
$419.90 USD
Regular price
Sale price
$419.90 USD
Unit price
per
SKU: : \ALR100D046C1US
Fearures:
- Monocrystalline Sapphire Wafer
- Purity> =99.995%
- Wafer size: 100 mm dia x 0.46 mm+/-25um thickness
- Orientation: R-plane (11-02) +/- 0.5 deg
- Orientaion Flat: 31 +/- 2.5 mm
- Primary Flat Location: Projected C-Axis 45 +/- 2 degree
- Surface Roughness: Ra <= 5 Angstrom
- One side polished
- Edge Chamfering: Ground with 45 degree chamfering
- Back surface: 1 +/- 0.2 um (by lapping process)
- Bow: <= 20um
- Laser Mark: none
- Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container
- Precaution: R plane sapphire wafer is easy to cleave compared with C plane's. Please handle it with a care
- Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
- Melting Point: 2040 degree C
- Density: 3.97 gram/cm2
- Growth Technique: CZ
- Crystal Purity: >99.99%
- Hardness: 9 ( mohs)
- Thermal Expansion: 7.5x10-6 (/ oC)
- Thermal Conductivity: 46.06 @ 0 oC, 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) )
- Dielectric Constant: ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis
- Loss Tangent at 10 GHz: < 2x10-5 at A axis, <5 x10-5 at C axis
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