• Sapphire ( single crystal of Al₂O₃ ) is being used extensively as a substrate for III-V nitrides and for many other epitaxial films 
• Orientation: C-plane off 0.2+/- 0.1^o to M-plane leftwards from the Primary; 0 +/- 0.1^o off to A-plane
  
• Diameter: 50.8mm+/-0.1mm
• Thickness: 430um+/-15 um
  
• Major Flat: A-axis[11-20]+/-0.3^o
• Major Flat Length: 16mm +/- 1mm
• Surface Finish: Front side: Epi- polished; Back side: Epi- polished 
  
• Bow=10 um, TTV: <= 10um, Micro-roughness
  
• Package: Each wafer is packed in 1000 class clean room 

Typical Properties:

• Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
• Melting Point: 2040 degree C
• Density: 3.97 gram/cm² 
• Growth Technique: CZ
• Crystal Purity:  >99.99%
• Hardness: 9 ( mohs)
• Thermal Expansion: 7.5x10^{-6 (}/ ^oC)
• Thermal Conductivity: 46.06 @ 0 ^oC, 25.12 @ 100 ^oC, 12.56 @ 400 ^oC ( W/(m.K) ) 
• Dielectric Constant: ~ 9.4 @300K  at A axis ~ 11.58@ 300K at C axis
• Loss Tangent at 10 GHz: < 2x10^-5  at A axis,  <5 x10^-5  at C axis

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