• Sapphire ( single crystal of Al₂O₃ ) is being used extensively as a substrate for III-V nitrides and for many other epitaxial films. 
• Orientation: C-axis[0001] ( +-0.5^o) with Standard Flat
• Orientation: C-axis[0001] +-0.5^o
• Diameter: 100mm  +/- 0.1mm
• Thickness: 500um +/- 25 um
•  Major Flat: A-axis[11-20]+/-0.5^o
•  Major Flat Length: 32.5mm +/- 1.5mm
• Surface Finish: Front sides: Epi- polished Ra<0.2nm(by AFM)
• TTV: <= 25um
• Polished surface: One side epi polished by special CMP technology.
•  Package:  Each wafer is packed in 1000 class clean room .
  

Typical Properties:

•  Crystal Structure:  Hexagonal. a=4.758 Angstroms c=12.99 Angstroms,
• Melting Point: 2040 degree C
• Density: 3.97 gram/cm² 
• Growth Technique: CZ
• crystal purity: 99.996%
• Hardness:  9 ( mohs)
• Thermal Expansion: 7.5x10^{-6 (}/ ^oC)
• Thermal Conductivity: 46.06 @ 0 ^oC     25.12 @ 100 ^oC, 12.56 @ 400 ^oC   ( W/(m.K) )
• Dielectric Constant: ~ 9.4 @300K  at A axis ~ 11.58@ 300K at C axis
• Loss Tangent at 10 GHz: < 2x10^-5  at A axis ,  <5 x10^-5  at C axis

•  Please click here for detail data

Other Sapphire	GaN	AlN template	ZnO
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