• Bi2Te3 Highly Oriented Crystal Substrate (001) irregular shape(about 5x5x0.1 mm) as Cleaved - BT-050501
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Bi2Te3 Highly Oriented Crystal Substrate (001) irregular shape(about 5x5x0.1 mm) as Cleaved - BT-050501

Bi2Te3 Highly Oriented Crystal Substrate (001) irregular shape(about 5x5x0.1 mm) as Cleaved - BT-050501

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$359.00 USD
$359.00 USD
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SKU: BTb050501US
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Bismuth telluride crystal substrate is highly oriented crystal ( not  single crystal ), which is a narrow gap layered semiconductor with a hexagonal structure.  The valence and conduction band structure can be described as a many-ellipsoidal model with 6 constant-energy ellipsoids that are centered on the reflection planes.  General thermoelectric materials, thermoelectric factor is currently the largest pure-phase block; mechanical dissociation can get high-quality topological insulator material.
  
Specifications:
  • Structure:                      Hexagonal, group 166R-3M
  • Grown method:              High-pressure vertical Bridgman
  • Lattice constant:           a=4.38A    c=30.5A
  • Substrate orientation:    highly oriented layer structure along <0001>
  • Surface:                        as Cleaved
  • Purity:                             99.999%, atomic ratio,
  • MeltingPoint               585 oC
  • Resistivity :                  0.1-5 mohm. cm
  • Mobility :                     3000 cm2 / V.s 
  • General Size:               irregular shape,about 5 mm x 5 mm x 0.1mm,
  • Packing:                      packed in plastic bag with vacuum


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