Cu Film on Ta/SiO2/ 4"Silicon Wafer, Cu=100 nm Ta=50nm SiO2=300nm, Si( – MTI Online Store

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Cu Film on Ta/SiO2/ 4"Silicon Wafer, Cu=100 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 4"x0.525mm, 1sp - FmCu100Ta50SO300onSiBa101D05

Cu Film on Ta/SiO2/ 4"Silicon Wafer, Cu=100 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 4"x0.525mm, 1sp - FmCu100Ta50SO300onSiBa101D05

Minimum Order: $20 (equipment), $100 (crystals)

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Low stock: 5 left

$599.00 USD

$599.00 USD

Sale Email for Lead Time

SKU: : \FmCu100Ta50SO300onSiBa101D05

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Specifications:

Cu coated SiO2/Si Wafer (4 inch size)
Thickness of Cu polycrystalline <111> film: 100 nm
Thickness of Ta diffusion barrier: 50 nm
4 inch dia. SiO2/Si wafer (Prime Grade)

P type, B doped, <100> orientation, Singe side polished
Resistivities: 1-20 ohm-cm
thermal oxide: 300 nm thickness

Surface Roughness: as grown
Package: One 1000 class clean room with 100 class plastic bag

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