Name: Cu Film on Ta/SiO2/ 4"Silicon Wafer, Cu=100 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 4"x0.525mm, 1sp
Brand: MTI
SKU: FmCu100Ta50SO300onSiBa101D05
Price: 398.0 USD
Availability: InStock

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Cu Epi Film on Si
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Cu Film on Ta/SiO2/ 4"Silicon Wafer, Cu=100 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 4"x0.525mm, 1sp

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$398.00 USD

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SKU: : \FmCu100Ta50SO300onSiBa101D05

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Specifications:

Cu coated SiO2/Si Wafer (4 inch size)
Thickness of Cu polycrystalline <111> film: 100 nm
Thickness of Ta diffusion barrier: 50 nm
4 inch dia SiO2/ Si wafer (Prime Grade)

P type, B doped, <100> orientation, Singe side polished
Resistivities: 1-20 ohm-cm
thermal oxide: 300 nm thickness

Surface Roughness: as grown
Package: One 1000 class clean room with 100 class plastic bag

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Cu Film on Ta/SiO2/ 4"Silicon Wafer, Cu=100 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 4"x0.525mm, 1sp

Cu Film on Ta/SiO2/ 4"Silicon Wafer, Cu=100 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 4"x0.525mm, 1sp

Cu Film on Ta/SiO2/ 4"Silicon Wafer, Cu=100 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 4"x0.525mm, 1sp

Cu Film on Ta/SiO2/ 4"Silicon Wafer, Cu=100 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 4"x0.525mm, 1sp

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