Name: Cu Film on Ta/SiO2/ Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped5x5x0.525mm, 1sp
Brand: MTI
SKU: FmCu400Ta50SO300onSiBa050505
Price: 19.0 USD
Availability: InStock

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Cu Epi Film on Si
Thin Films A-Z

Cu Film on Ta/SiO2/ Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped5x5x0.525mm, 1sp

36 in stock

$19.00 USD

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SKU: : \FmCu400Ta50SO300onSiBa050505

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Specifications:

Cu coated SiO2/Si Wafer (5x5 mm size)
Thickness of polycrystalline Cu <111> film: 400 nm
Thickness of Ta diffusion barrier: 50 nm
5x5x0.5 mm SiO2/ Si wafer (Prime Grade)

P-type, B doped, <100> orientation, SSP
Resistivities: 1-20 ohm-cm
thermal oxide: 300 nm

Surface Roughness: as grown
Package: One 1000 class clean room with 100 class plastic bag
10 pcs per package for minimum order

		iO2
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Cu Film on Ta/SiO2/ Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped5x5x0.525mm, 1sp

Cu Film on Ta/SiO2/ Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped5x5x0.525mm, 1sp

Cu Film on Ta/SiO2/ Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped5x5x0.525mm, 1sp

Cu Film on Ta/SiO2/ Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped5x5x0.525mm, 1sp

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