![GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.485mm, 1sp, Prime Grade - GATea50D0485C1deg2US](http://mtixtl.com/cdn/shop/products/thumb_gaas_a32ca29e-86f6-4941-a420-4cbd4fa127be.jpg?v=1709752240&width=1946)
GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.485mm, 1sp, Prime Grade - GATea50D0485C1deg2US
GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.485mm, 1sp, Prime Grade - GATea50D0485C1deg2US
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$199.00 USD
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SKU: : \GATea50D0485C1deg2US
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![GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.485mm, 1sp, Prime Grade - GATea50D0485C1deg2US](http://mtixtl.com/cdn/shop/products/thumb_gaas_a32ca29e-86f6-4941-a420-4cbd4fa127be.jpg?v=1709752240&width=1445)
- GaAs single crystal wafer, PRIME Grade
- Growing Method: VGF
- Orientation: (100) 2 degree OFF Toward [101] +/- 0.5 deg
- Size: 2" dia x 0.485mm
- Polishing: One side polished
- Doping: Te doped
- Conductor type: N-type
- Carrier Concentration: (0.1-0.6) x 10^18 /cm^3
- Mobility: 3500-3600 cm^2/V.S
- Resistivity: (2.9-10.7) E-3 ohm-cm
- EPD: <8000/cm^2
- Note: EPI polishing: RMS < 5 Angstrom
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