GaAs single crystal wafer
Growing Method: VGF
Orientation: (111)B

Primary Flat: EJ(0-11)+/- 0.5 deg; Secondary Flat: EJ(-211)
Size: 5X5 x 0.625mm 
Polishing: One side polished
Doping: undoped
Conductor type: Semi-Insulating

Resistivity:(1.57-3.86)E8 ohm.cm
Carrier Concentration: N/A
Mobility: (4120-5860) cm^2/V.S
EPD: N/A

Ra(Average Roughness) : < 0.4 nm