GaAs, VGF-grown (100) Si-doped, N-type, 2" Dia x 0.35mm, 2sp - GASia50

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GaAs, VGF-grown (100) Si-doped, N-type, 2" Dia x 0.35mm, 2sp - GASia50D035C2US5

Minimum Order: $20 (equipment), $100 (crystals)

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$595.00 USD

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The Silicon-Doped Gallium Arsenide (GaAs) Single Crystal Wafer is a 2-inch-diameter, N-type conductive semiconductor substrate grown using the Vertical Gradient Freeze (VGF) method. It features a (100) crystal orientation, a thickness of 0.35 mm, and a double-side-polished (DSP) surface.

This Si-doped GaAs wafer has a carrier concentration of (1.60–3.94) × 10¹⁸ cm^-3, carrier mobility of 1400–2100 cm²/(V·s), and resistivity of (1.08–1.90) × 10^-3 Ω·cm. With an average surface roughness (Ra) below 0.4 nm and EPI-ready surface preparation and packing, it is suitable for epitaxial growth, semiconductor research, and thin-film deposition applications.

SPECIFICATIONS

Product Type	Gallium Arsenide (GaAs) Single Crystal Wafer
Material	Gallium Arsenide (GaAs)
Crystal Growth Method	Vertical Gradient Freeze (VGF)
Crystal Orientation	(100)
Wafer Diameter	2 inches (approximately 50.8 mm)
Wafer Thickness	0.35 mm
Surface Polishing	Double-side polished (DSP)
Doping	Silicon-doped (Si-doped)
Electrical Type	N-type conductive
Carrier Concentration	(1.60–3.94) × 10¹⁸ cm^-3
Carrier Mobility	1400–2100 cm²/(V·s)
Resistivity	(1.08–1.90) × 10^-3 Ω·cm
Etch Pit Density (EPD)	< 500 (source lists cm²; unit requires confirmation, as EPD is conventionally expressed in cm^-2)
Average Surface Roughness (Ra)	< 0.4 nm
Surface Preparation & Packing	EPI-ready surface and packing
Features & Applications	VGF-grown GaAs single crystal substrate. (100) crystallographic orientation. Silicon-doped, N-type conductive semiconductor material. 2-inch diameter and 0.35 mm thickness. Double-side-polished surface. Carrier concentration of (1.60–3.94) × 10¹⁸ cm^-3 Carrier mobility of 1400–2100 cm²/(V·s). Average surface roughness below 0.4 nm. EPI-ready surface preparation and packing. Suitable for epitaxial growth, semiconductor research, and thin-film deposition.