GaAs single crystal wafer
Growing Method: VGF
Orientation: (111)B

Primary Flat: EJ(0-11)+/- 0.5 deg; Secondary Flat: EJ(-211)
Size: 2" dia x 0.35mm
Polishing: Two sides  polished
Doping: Si-doped
Conductor type: S-C-N

Resistivity:(1.5-4.1)E-3 ohm.cm
Carrier Concentration: (0.6-2.4)x10^18 /c.c
Mobility:1750-2450 cm^2/V.S
EPD: N/A

Ra(Average Roughness) : < 0.4 nm

Note: EPI ready wafers