GaAs single crystal wafer
Growing Method: VGF
Orientation: (111)B

Primary Flat: EJ(0-11)+/- 0.5 deg; Secondary Flat: EJ(-211)
Size: 4" dia x 0.625mm
Polishing: Two sides  polished
Doping: undoped
Conductor type: Semi-Insulating

Resistivity:(2.13-3.15)E8 ohm.cm
Carrier Concentration: N/A
Mobility: (4890-5360) cm^2/V.S
EPD: N/A

Ra(Average Roughness) : < 0.4 nm

Note: EPI ready wafers