• GaAs, Growing Method: VGF(100) Si doped, N-type, 4" dia x 0.625mm, 2sp, Carrier Concentration: (1.47-3.78) x 10^18 /cm^3 - GASia100D06C2US5
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GaAs, Growing Method: VGF(100) Si doped, N-type, 4" dia x 0.625mm, 2sp, Carrier Concentration: (1.47-3.78) x 10^18 /cm^3 - GASia100D06C2US5

GaAs, Growing Method: VGF(100) Si doped, N-type, 4" dia x 0.625mm, 2sp, Carrier Concentration: (1.47-3.78) x 10^18 /cm^3 - GASia100D06C2US5

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$459.00 USD
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SKU: GASia100D06C2US5
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  • GaAs single crystal wafer
  • Growing Method:                       VGF
  • Orientation:                               (100)
  • Size:                                         4"  dia x 0.625 mm
  • Polishing:                                  two sides polished
  • Doping:                                     Si doped
  • Conductor type:                         S-C-N
  • Carrier Concentration:                (1.47-3.78) x 10^18/cm^3
  • Mobility:                                    (1600 - 2130) cm^2/V.S
  • Resistivity:                                (1.03 - 2.01) E-3  ohm.cm
  • EPD:                                        < 5000cm^2
  • Ra(Average Roughness) :           < 0.4 nm
  • EPI ready surface and packing 

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