GaAs, VGF Grown (110) ori. N type, Si-doped, 10x10x0.3mm, 2sp – MTI Online Store

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GaAs, VGF Grown (110) ori. N type, Si-doped, 10x10x0.3mm, 2sp

GaAs, VGF Grown (110) ori. N type, Si-doped, 10x10x0.3mm, 2sp

Minimum Order: $20 (equipment), $100 (crystals)

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Low stock: 5 left

$279.00 USD

$279.00 USD

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SKU: : \GASie101003S2US

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GaAs single crystal wafer
Growing Method: VGF
Orientation: (110)
Size: 10 x 10 x 0.3-0.35 mm
Polishing: Two sides polished
Doping: Si-doped
Conductor type: S-C-N
Carrier Concentration:(2.49-3.27)x10^18/c.c
Mobility: 1630- 1870cm^2/V.S
Resistivity :( 1.17-1.4)x10^-3 ohm.cm
Ra(Average Roughness) : < 0.4 nm

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