• GaAs, VGF Grown (110) ori. N type, Si-doped, 2" dia x 0.35mm, 1sp
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GaAs, VGF Grown (110) ori. N type, Si-doped, 2" dia x 0.35mm, 1sp

GaAs, VGF Grown (110) ori. N type, Si-doped, 2" dia x 0.35mm, 1sp

Low stock: 4 left

$299.50 USD
$299.50 USD
Sale Email for Lead Time

SKU: GASie50D035C1US5
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Specifications:
  • GaAs single crystal wafer
  • Growing method: VGF
  • Orientation: (110)
  • Size: 2" dia x 0.35 mm 
  • Polishing: One side polished
  • Doping: Si-doped
  • Conductor type: S-C-N
  • Carrier concentration: (1.20-2.45)x10^17/cm^3
  • Mobility:  3380-3970 cm^2/V.S
  • Ra(Average Roughness) : < 0.4 nm
  • Resistivity: (0.76-1.37)x10^-2 ohm.cm
  • Note:  EPI ready wafers


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