GaAs VGF Grown(110) orientation, un-doped, Semi-Insulating, 3" dia x 0.5mm, 1sp
GaAs VGF Grown(110) orientation, un-doped, Semi-Insulating, 3" dia x 0.5mm, 1sp
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$329.00 USD
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SKU: : \GAUe76D05C1US5
- GaAs single crystal wafer
- Growing Method: VGF
- Orientation: (110)
- Primary Flat: EJ(1-10) +/- 0.5 degree
- Secondary Flat: EJ (001) +/- 0.5 degree
- Size: 3" dia x 0.5mm
- Polishing: One side polished
- Doping: Un-doped, Semi-Insulating
- Conductor type:S-I
- Carrier Concentration: N/A
- Mobility: 4570-6190cm^2/V.S
- Resistivity : (0.89-3.8)x10^8ohm.cm
- EPI ready surface and packing
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