• GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated, 100mm D x 0.6 mm, 2SP
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GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated, 100mm D x 0.6 mm, 2SP

GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated, 100mm D x 0.6 mm, 2SP

40 in stock

$399.00 USD
$399.00 USD
Sale Email for Lead Time

SKU: GAUa100D06C2US5
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  • GaAs single crystal wafer
  • Growing Method:                 VGF
  • Orientation:                        (100) 
  • Flat:                                   (01-1) .(011)
  • Size:                                 100mm dia x 0.6mm 
  • Polishing:                           two sides polished
  • Ra(Average Roughness) :    < 0.4 nm
  • Doping:                              undoped
  • Conductor type:                  Semi-Insulating
  • Resistivity:                         (1.41-4.4)E8 Ohm.cm
  • Mobility:                            3240-6000 cm2 / v.s.
  • EPD:                                 <5000/cm2
  • EPI ready surface and packing

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