GaAs single crystal wafer,Mechanical Grade
Growing Method:       VGF
Orientation:               (100)
Diameter:                  4" dia
Thickness:                0.6 mm +/- 0.05 mm
Polishing:                 two sides polished; 

 NOT EPI Ready wafer
Doping:                    undoped
Conductor type:        Semi-Insulating
Resistivity:               N/A
Mobility:                   N/A
EPD:                       N/A

PrimPrimary Flat:      EJ(0-1-1)

Minor Flat:               EJ(0-11)


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