GaAs single crystal wafer
Growing Method:               VGF
Orientation:                       (100)
Size:                                 2" dia x 0.35mm
Polishing:                          one side polished
Doping:                             Zn doped
Conductor type:                 S-C-P
Carrier Concentration:         (2.67-3.27) x 10^18 /cm^3

Mobility:                           116-125 cm^2/V.S

EPD:                                <5000/cm^2

Resistivity:                        (1.64-1.88)x10^-2 ohm.cm

Ra(Average Roughness) :   < 0.4 nm

Note: EPI ready wafers

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