GaN single crystal substrates is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. The large growth rate enables the growth of self-supporting wafer thicknesses in a convenient time period.

Specifications of the Substrate

• Orientation:                     c-axis (0001) +/- 1.0 ^o
• Nominal Thickness           350+/- 25 microns
• Dimension:                      10 mm x 10.5 mm +/- 0.5 mm
• Bow                                <5 microns
• TTV                                <10 microns
• Conduction Type:             Semi-Insulating
• Resistivity                        >10⁶ ohm-cm
• Dislocation Density           <5x10⁶cm-2
• Macro Defect Density        <=5 cm-2 
• Transmission:                   => 70%    ( click here to see transmission curve )
• Front Surface Finish          (Ga Face), RMS <0.3 nm
• Back Surface Finish           (N Face), RMS <0.5 nm
• Useable area :               >90% ( edge exclsion)      

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