GaN single crystal substrates is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. The large growth rate enables the growth of self-supporting wafer thicknesses in a convenient time period.

Specifications of Substrate 

• Orientation:                     c-axis (0001) +/- 1.0 ^o
• Nominal Thickness           250+/- 50 um
• Dimension:                      50.8mm+/-1mm
• Bow                                <5 microns
• TTV                                <10 microns
• Conduction Type:             N+ type
• Resistivity                        < 0.05 Ohm-cm
• Dislocation Density           < 1x107cm-2
• Transmission:                   => 70%    ( click here to see transmission curve )
• Front Surface Finish          (Ga Face), Epi-polished,RMS <1 nm                             
• Edge Exclusion Area         1mm
• Carrier Concentration:      >5E17 /c.c
• Package Single Wafer Container or membrane box 

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