GaN single crystal substrates is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. The large growth rate enables the growth of self-supporting wafer thicknesses in a convenient time period.

Specifications of the Substrate

• Orientation:                     c-axis (0001) +/- 1.0 ^o
• Nominal Thickness           475+/- 25 microns
• Dimension:                      10 mm x 10 mm +/- 0.5 mm
• Bow                                <5 microns
• TTV                                <10 microns
• Conduction Type:             Semi-Insulating
• Resistivity                        10⁶ ohm-cm
• Dislocation Density           <5x10⁶cm-2
• Macro Defect Density        <=5 cm-2 (Production Grade)
• Transmission:                   => 70%    ( click here to see transmission curve )
• Front Surface Finish          (Ga Face), RMS <0.5 nm
• Edge Exclusion Area          1 mm
• Package Single Wafer        Container or membrane box
  
• For the X-ray Diffraction of GaN,Please click here.

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