GaN Template on silicon is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template on silicon is a cost effective way to replace GaN single crystal substrate.

• Nominal GaN thickness:            0.20μm ± 0.1 μm
• Front Surface finish (Ga-face):    <1nm RMS,  As-grown,
  
  
• Back surface finish:                   Silicon ( 111) N-type P-doped R:1-10 ohm.cm
  
  
  
• GaN orientation:                        C-plane (00.1)
• Polarity:                                   Ga-face
• Conduction Type:                      Undoped (N-) and resistivities: < 0.05 Ohm-cm
  
• Macro Defect Density:               <1/cm^2
• Wafer base:                              Silicon [111], 10x10x0.279mm, one side polished
• There is ~200nm AlN buffer layer between the silicon and GaN 

• Please click here to see XRD Rocking curve of GaN template
• Please click here to see Dislocation vs Thickness of GaN template

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