GaN  Template on silicon is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template on silicon is a cost effective way to replace GaN single crystal substrate.

• Nominal GaN thickness:           0.5μm ± 0.1 μm
• Front Surface finish (Ga-face):   <1nm RMS,  As-grown 
  
• Back surface finish:                  as received
  
• GaN orientation:                       C-plane (00.1)
• Polarity:                                   Ga-face
• Conduction Type:                     Undoped (N-)
• Macro Defect Density:              <5/cm^2
• Wafer base:                             Silicon [111], N type, P doped, Res: 1-10 ohm-cm, 2" diameter x 0.279mm, one side polished
• There is ~200nm AlN buffer layer between the silicon and GaN 

• Please click here to see XRD Rocking curve of GaN template
• Please click here to see Dislocation vs Thickness of GaN template

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