-GaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate.

Specifications

• Sizes 2” Round
• Dimensions 50.8mm  +/- 0.25mm
• Substrate Sapphire,  Orientation c-axis (0001) +/- 1.0 ^o
  
• Substrate Sapphirethickness: 0.43mm+/-0.025mm
  Conduction Type: N-type,
• Resistivity < 0.5 Ohm-cm
• Front Surface Finish (Ga Face) As-grown
• Back Surface Finish Sapphire as-received finish
• Useable Surface Area >90% 
• Edge Exclusion Area 1mm
  Dislocation Density: <5x10^8 cm^−2 
  
• Package Single Wafer Container
• GaN layer thickness 4-5 microns , (+/- 10%) with roughness: ~5 nm RMS 

 Related data

• Please click here to see XRD Rocking curve of GaN template
• Please click here to see Dislocation vs Thickness of GaN template
• Please click here to see RMS of GaN template

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