-GaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN.  GaN template is a cost effective way to replace GaN single crystal substrate.

Specifications:
        Production grade

• Sizes 2” Round
• Dimensions 50.8mm  +/- 0.25mm
• Substrate Sapphire,  C-plane-(0001) with 0.2 degree miscut toward M-plane
• Conduction Type: N-type,
• Resistivity :N/A
• Front Surface Finish (Ga Face) As-grown
• Back Surface Finish Sapphire as-received finish
• Useable Surface Area >90% 
• Edge Exclusion Area 1mm
• Package Single Wafer Container
• GaN layer thickness  : 30 microns , (+/- 10%) with roughness: ~10 nm RMS as measured by the Wyko (white light interferometer) for 50 umx50um area

Macro Defect Density:             <=5 cm^-2
Lattice Constant Mismatch:   14%  mismatch
Dislocation Density:               5x10^9/ cm^2

Related data

• Please click here to see XRD Rocking curve of GaN template
• Please click here to see Dislocation vs Thickness of GaN template
• Please click here to see RMS of GaN template

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