• Chmistry:                    ß-Ga2O3 
  
• Grown Method:           Czochralski 
• Structure:                    Monoclinic
• Lattice Constant:         a=12.23A, b=3.04A, c=5.80A, ß=103.7°
• Orientation:                  <010> +/-1°  
• Size:                          10x10 x 0.35 mm
• Conduction Type:      Semi-insulating, Fe-doped
• Doping density (Fe):  ~5E17 by SIMS.
• Front surface finish:   Epi-polished, RMS <0.5nm 
  Back surface finish:    Optical polished

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